2SD213106 SPC, CIRCUIT, LA FONCTION
Nom de la pièce: 2SD213106
Constructeur: Toshiba Semiconductor
Emballage:
Description:
Pins:
Température: Min °C | Max °C
Taille: KB
- 2SD2130
EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS) - 2SD2131
TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) - 2SD213106
Silicon Triple Diffused Type (Darlington) - 2SD2131_06
Silicon NPN Triple Diffused Type (Darlington) - 2SD2132
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-92 - 2SD2133
Silicon epitaxial planar type - 2SD2133Q
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-221VAR - 2SD2133R
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-221VAR - 2SD2133S
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-221VAR - 2SD2134
Silicon epitaxial planar type - 2SD2134Q
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | TO-221VAR - 2SD2134R
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | TO-221VAR - 2SD2134S
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | TO-221VAR - 2SD2135
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-221VAR - 2SD2136
Silicon triple diffusion planar type